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Ordering number:EN2006A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1417/2SC3647
High-Voltage Switching Applications
Features
* Adoption of FBET, MBIT processes. * High breakdown voltage and large current capacity. * Fast switching time. * Very small size making it easy to provide highdensity, small-sized hybrid ICs.
Package Dimensions
unit:mm 2038
[2SA1417/2SC3647]
E : Emitter C : Collector B : Base
( ) : 2SA1417
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Moutned on ceramic board (2502x0.8mm)
SANYO : PCP (Bottom view)
Conditions
Ratings (-)120 (-)100 (-)6 (-)2 (-)3 500 1.5 150 -55 to +150
Unit V V V A A mW W
C C
Tj Tstg
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Turn-ON Time Stotage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=(-)100V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)100mA VCE=(-)10V, IC=(-)100mA VCB=(-)10V, f=1MHz IC=(-)1A, IB=(-)100mA 100* 120 (25) 16 (-0.22) 0.13 IC=(-)1A, IB=(-)100mA V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10A, IC=0 ton tstg tf See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (-)0.85 (-)120 (-)100 (-)6 (80) 80 (750) 1000 (40) 50 (-0.6) 0.4 (-)1.2 Conditions Ratings min typ max (-)100 (-)100 400* MHz pF pF V V V V V V ns ns ns ns ns ns Unit nA nA
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3277KI/N255MW, TS No.2006-1/4
2SA1417/2SC3647
* : The 2SA1417/2SC3647 are classified by 100mA hFE as follows :
100 R 200 140 S 280 200 T 400
Marking 2SA1417 : AC 2SC3647 : CC
hFE rank : R, S, T
Switching Time Test Circuit
(For PNP, the polarity is reversed) Unit (resistance : , capacitance : F)
No.2006-2/4
2SA1417/2SC3647
No.2006-3/4
2SA1417/2SC3647
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice.
PS No.2006-4/4

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